SOI monolithic active pixel detector technology for improvement of I-V characteristics and reliability

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Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Breakdown voltage and leakage current of pixel diodes are very important parameters of the devices. This paper addresses recent development in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.
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