SOI monolithic active pixel detector technology for improvement of I-V characteristics and reliability
Abstract:
Evaluations

Nobody evaluated this document yet.

Login to evaluate.

Monolithic active pixel detectors in SOI (Silicon On Insulator) technology are novel sensors of ionizing radiation, which exploit SOI substrates for the integration of readout electronics and a pixel detector. Breakdown voltage and leakage current of pixel diodes are very important parameters of the devices. This paper addresses recent development in the field of the technology of the SOI detectors, which lead to improvement of reliability and current-voltage characteristics of the sensors.
Cookie:
The our website use cookies to provide you with top-quality services, which are personalised to individual needs. Using the website without changing the setting of cookies is that they will be stored on your end device. You can at any time make changes to the settings for cookies. Close